Journalartikel

Experimental O VI dielectronic recombination rate coefficient and its enhancement by external electric fields


AutorenlisteBöhm, S; Müller, A; Schippers, S; Shi, W; Eklöw, N; Schuch, R; Danared, H; Badnell, NR

Jahr der Veröffentlichung2003

Seiten1157-1162

ZeitschriftAstronomy & Astrophysics

Bandnummer405

Heftnummer3

ISSN0004-6361

Open Access StatusGreen

DOI Linkhttps://doi.org/10.1051/0004-6361:20030752

VerlagEDP Sciences


Abstract
The dielectronic recombination rate coefficient of O VI ions has been measured at the heavy ion storage ring CRYRING. The electron energy range covered all dielectronic recombination resonances attached to 2s-->2p (Deltan=0) core excitations. The rate coefficient in a plasma has been derived. It is compared to theoretical data. In addition the influence of external electric fields on the dielectronic recombination has been investigated. When increasing the electric field strength to 340 V/cm the experimental recombination rate coefficient is found to increase by up to a factor of 2.



Zitierstile

Harvard-ZitierstilBöhm, S., Müller, A., Schippers, S., Shi, W., Eklöw, N., Schuch, R., et al. (2003) Experimental O VI dielectronic recombination rate coefficient and its enhancement by external electric fields, Astronomy & Astrophysics, 405(3), pp. 1157-1162. https://doi.org/10.1051/0004-6361:20030752

APA-ZitierstilBöhm, S., Müller, A., Schippers, S., Shi, W., Eklöw, N., Schuch, R., Danared, H., & Badnell, N. (2003). Experimental O VI dielectronic recombination rate coefficient and its enhancement by external electric fields. Astronomy & Astrophysics. 405(3), 1157-1162. https://doi.org/10.1051/0004-6361:20030752



Schlagwörter


ASTROPHYSICALLY ABUNDANT ELEMENTSATOMIC DATAatomic processesCORE EXCITATIONSINTERMEDIATE-COUPLING CALCULATIONSIONIZATION EQUILIBRIUMISOELECTRONIC SEQUENCELABORATORY MEASUREMENTSline : formationLOW-DENSITY PLASMASPHOTOIONIZED GASPlasmasradiation mechanisms : generalRADIATIVE RECOMBINATIONTHEORETICAL CALCULATIONS


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