Konferenzpaper

Jahr der Veröffentlichung: 2003

Seiten: 231-236

Zeitschrift: Thin Solid Films

Bandnummer: 431

ISSN: 0040-6090

DOI Link: https://doi.org/10.1016/S0040-6090(03)00164-0

Konferenz: Spring Meeting of the European-Materials-Research-Society (E-MRS)

Verlag: Elsevier

Abstract: 
With a fixed radio frequency power of 200 W and H2S flow in the range of 20-30 sccm, high quality CuInS2 films with good adhesion were sputtered on bare float glass substrates at a substrate temperature of 400 degreesC or above. X-ray diffraction revealed that the as-sputtered films are highly (1 12) oriented. The surface of the films is rough, mainly due to an incoherent top layer of CuxS precipitates. The optical absorption coefficients and bandgaps of the films were estimated by optical transmission measurements at room temperature. The as-grown films sputtered at 500 degreesC have, typically, an optical bandgap of 1.44 eV. The electrical properties, such as the carrier concentration, Hall mobility and resistivity, in dependence on temperature (from 77 to 350 K) were characterized by Hall effect measurements. (C) 2003 Elsevier Science B.V. All rights reserved.

Harvard-Zitierstil: He, Y., Krämer, T., Polity, A., Gregor, R., Kriegseis, W., Österreicher, I., et al. (2003) Preparation and characterization of highly (112)-oriented CuInS₂ films deposited by a one-stage RF reactive sputtering process, Thin Solid Films, 431, pp. 231-236. https://doi.org/10.1016/S0040-6090(03)00164-0

APA-Zitierstil: He, Y., Krämer, T., Polity, A., Gregor, R., Kriegseis, W., Österreicher, I., Hasselkamp, D., & Meyer, B. (2003). Preparation and characterization of highly (112)-oriented CuInS₂ films deposited by a one-stage RF reactive sputtering process. Thin Solid Films. 431, 231-236. https://doi.org/10.1016/S0040-6090(03)00164-0