Journalartikel

Jahr der Veröffentlichung: 2003

Seiten: 75-87

Zeitschrift: Journal of Optoelectronics and Advanced Materials

Bandnummer: 5

Heftnummer: 1

ISSN: 1454-4164

Verlag: INOE Publishing House

Abstract: 
Growth and evaluation of InGaAs(P) epilayers grown on InP by CBE technique for optical telecommunication applications is discussed. The grown InP epilayers have HALL mobility values of 70.000 and 2800 cm(2)/V.S with background impurities as low as 1 x 10(14) cm(-3) and 2 x 10(15) cm(-3) at 77 K and 300 K respectively. FWHM of the (004) Bragg reflection peak as narrow as 17 arcsec was obtained for these samples by HRXRD measurements. RT PL measurements also show typical spectra with a peak FWHM of about 19 nm. Lattice matched In0.53Ga0.47As was grown on InP and the strain value of 0.34 mum thick layers was about 6.7 x 10(-4). The mobilities of the thick undoped ternary layer were 5970 (300 K) and 37,550 cm(2)/V.s (77 K) with carrier concentration in the range of 1.2 x 10(15) - 42 x 10(14) cm(-3). Be-doped In0.53Ga0.47As layers with p(300K) = 9 x 10(18) cm(-3) and mu(300K) = 58 cm(2)/V.s were also grown on InP which exhibits a line width (HRXRD) of nearly 25-30 arcsec. In(1-x)Ga(x)AsyP(1-y) quaternary epilayers (x = 0.24, y = 0.52) closely lattice matched to InP have also been grown. The HRXRD pattern of the quaternary layers shows a lattice mismatch of 2.4 x 10(-3) and a luminescence peak FWHM of 8 meV. Further, the homogeneity of these layers was checked using FTPL study at different positions of the full wafer and it was extremely good. MQWs structures were also grown for the fabrication of SOA devices and are characterised by PL, absorption, ECV measurements.

Harvard-Zitierstil: Udhayasankar, M., Kumar, J. and Ramasamy, P. (2003) Growth and characterisation of InGaAs(P) by CBE technique, Journal of Optoelectronics and Advanced Materials, 5(1), pp. 75-87

APA-Zitierstil: Udhayasankar, M., Kumar, J., & Ramasamy, P. (2003). Growth and characterisation of InGaAs(P) by CBE technique. Journal of Optoelectronics and Advanced Materials. 5(1), 75-87.