Konferenzpaper

Jahr der Veröffentlichung: 2002

Seiten: 4380-4386

Zeitschrift: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Atomic, Molecular and Optical Physics

Bandnummer: 16

Heftnummer: 28-29

ISSN: 0217-9792

DOI Link: https://doi.org/10.1142/S0217979202015467

Konferenz: Symposium on Advance Characterization of Electronic Materials held at the 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002)

Verlag: World Scientific Publishing

Abstract: 
CuInS2 films were deposited on float glass substrates by a one-stage reactive RF sputter process using a Cu-In alloy target and H2S gas. The sputtered films generally have a (112) preferential orientation. X-ray reflectometry was used to measure the thickness, surface density as well as surface roughness of the sputtered films. The surface morphology of the films was studied by scanning electron microscopy. Energy-dispersive X-ray analysis was performed to determine the composition of the films. XPS revealed that the film surfaces remain In-rich with respect to the bulk.

Harvard-Zitierstil: He, Y., Österreicher, I., Krämer, T., Polity, A., Kriegseis, W., Meyer, B., et al. (2002) Surface and structural characterization of CuInS₂ thin films deposited by one-stage RF reactive sputtering, International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Atomic, Molecular and Optical Physics, 16(28-29), pp. 4380-4386. https://doi.org/10.1142/S0217979202015467

APA-Zitierstil: He, Y., Österreicher, I., Krämer, T., Polity, A., Kriegseis, W., Meyer, B., & Hardt, M. (2002). Surface and structural characterization of CuInS₂ thin films deposited by one-stage RF reactive sputtering. International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Atomic, Molecular and Optical Physics. 16(28-29), 4380-4386. https://doi.org/10.1142/S0217979202015467