Journal article

Publication year: 2002

Pages: L484-L486

Journal: Japanese Journal of Applied Physics

Volume number: 41

Issue number: 4B

ISSN: 0021-4922

DOI Link: https://doi.org/10.1143/JJAP.41.L484

Publisher: IOP Publishing

Abstract: 
We demonstrate the first one-stage growth of CulnS(2) films by radio frequency (RF) reactive sputtering with a Cu-In alloy target and H2S gas. High quality films of good adhesion can be sputtered either on bare float glass at a minimum substrate temperature of 400degreesC or on Mo- or ZnO-coated float glass at a relatively low temperature of 200degreesC. X-ray diffraction results revealed that the films sputtered on the bare, Mo- or ZnO-coated float glass substrates are highly (112) oriented. Typically the as-deposited films are slightly Cu-rich as determined by Rutherford backscattering spectroscopy. The Surface morphology and homogeneity of the layers were as well analyzed by atomic force microscopy and secondary ion mass spectroscopy.

Harvard Citation style: He, Y., Krämer, T., Österreicher, I., Polity, A., Gregor, R., Kriegseis, W., et al. (2002) Highly (112)-oriented CuInS₂ thin films deposited by a one-stage RF reactive sputtering process, Japanese Journal of Applied Physics, 41(4B), pp. L484-L486. https://doi.org/10.1143/JJAP.41.L484

APA Citation style: He, Y., Krämer, T., Österreicher, I., Polity, A., Gregor, R., Kriegseis, W., Hasselkamp, D., & Meyer, B. (2002). Highly (112)-oriented CuInS₂ thin films deposited by a one-stage RF reactive sputtering process. Japanese Journal of Applied Physics. 41(4B), L484-L486. https://doi.org/10.1143/JJAP.41.L484