Journal article

Publication year: 2002

Journal: Physical Review B

Volume number: 65

Issue number: 12

ISSN: 2469-9950

eISSN: 2469-9969

Open access status: Green

DOI Link: https://doi.org/10.1103/PhysRevB.65.125302

Publisher: American Physical Society

Abstract: 
We have derived general boundary conditions (BC's) for the multiband envelope functions (which do not contain spurious solutions) in semiconductor heterostructures with abrupt heterointerfaces. These BC require the conservation of the probability flux density normal to the interface and guarantee that the multiband Hamiltonian be self-adjoint. The BC are energy independent and are characteristic properties of the interface. Calculations have been performed of the effect of the general BC on the electron energy levels in a potential well with infinite potential barriers using a coupled two band model. The connection with other approaches to determining BC for the envelope function and to the spurious solution problem in the multiband k.p model are discussed.

Harvard Citation style: Rodina, A., Alekseev, A., Efros, A., Rosen, M. and Meyer, B. (2002) General boundary conditions for the envelope function in the multiband k•p model -: art. no. 125302, Physical Review B, 65(12), Article 125302. https://doi.org/10.1103/PhysRevB.65.125302

APA Citation style: Rodina, A., Alekseev, A., Efros, A., Rosen, M., & Meyer, B. (2002). General boundary conditions for the envelope function in the multiband k•p model -: art. no. 125302. Physical Review B. 65(12), Article 125302. https://doi.org/10.1103/PhysRevB.65.125302