Journal article

Tungsten and fluorine co-doping of VO2 films


Authors listBurkhardt, W; Christmann, T; Franke, S; Kriegseis, W; Meister, D; Meyer, BK; Niessner, W; Schalch, D; Scharmann, A

Publication year2002

Pages226-231

JournalThin Solid Films

Volume number402

Issue number1-2

ISSN0040-6090

DOI Linkhttps://doi.org/10.1016/S0040-6090(01)01603-0

PublisherElsevier


Abstract
Fluorine- and tungsten-doped vanadium dioxide (VO2) is a promising coating material for applications as energy-conserving windows. We prepared VO2 films simultaneously co-doped with fluorine and tungsten and report on the results of optical measurements and photoelectron spectrometry. A comparison is given to single-element doping. Clear evidence for an interaction of fluorine and tungsten in VO2 is found in the switching behaviour at the semiconductor-to-metal phase transition. An explanation is given based on two different effects of fluorine incorporation observed in the ultraviolet photoelectron spectrometry results. Concerning other film properties, the two elements act independently of each other. (C) 2002 Elsevier Science B.V All rights reserved.



Citation Styles

Harvard Citation styleBurkhardt, W., Christmann, T., Franke, S., Kriegseis, W., Meister, D., Meyer, B., et al. (2002) Tungsten and fluorine co-doping of VO2 films, Thin Solid Films, 402(1-2), pp. 226-231. https://doi.org/10.1016/S0040-6090(01)01603-0

APA Citation styleBurkhardt, W., Christmann, T., Franke, S., Kriegseis, W., Meister, D., Meyer, B., Niessner, W., Schalch, D., & Scharmann, A. (2002). Tungsten and fluorine co-doping of VO2 films. Thin Solid Films. 402(1-2), 226-231. https://doi.org/10.1016/S0040-6090(01)01603-0



Keywords


METAL-INSULATOR-TRANSITIONoptical coatingsphase transitionsphotoelectron spectroscopy (PES)vanadium dioxidevanadiumoxide

Last updated on 2025-02-04 at 07:21