Journal article
Authors list: Burkhardt, W; Christmann, T; Franke, S; Kriegseis, W; Meister, D; Meyer, BK; Niessner, W; Schalch, D; Scharmann, A
Publication year: 2002
Pages: 226-231
Journal: Thin Solid Films
Volume number: 402
Issue number: 1-2
ISSN: 0040-6090
DOI Link: https://doi.org/10.1016/S0040-6090(01)01603-0
Publisher: Elsevier
Abstract:
Fluorine- and tungsten-doped vanadium dioxide (VO2) is a promising coating material for applications as energy-conserving windows. We prepared VO2 films simultaneously co-doped with fluorine and tungsten and report on the results of optical measurements and photoelectron spectrometry. A comparison is given to single-element doping. Clear evidence for an interaction of fluorine and tungsten in VO2 is found in the switching behaviour at the semiconductor-to-metal phase transition. An explanation is given based on two different effects of fluorine incorporation observed in the ultraviolet photoelectron spectrometry results. Concerning other film properties, the two elements act independently of each other. (C) 2002 Elsevier Science B.V All rights reserved.
Citation Styles
Harvard Citation style: Burkhardt, W., Christmann, T., Franke, S., Kriegseis, W., Meister, D., Meyer, B., et al. (2002) Tungsten and fluorine co-doping of VO2 films, Thin Solid Films, 402(1-2), pp. 226-231. https://doi.org/10.1016/S0040-6090(01)01603-0
APA Citation style: Burkhardt, W., Christmann, T., Franke, S., Kriegseis, W., Meister, D., Meyer, B., Niessner, W., Schalch, D., & Scharmann, A. (2002). Tungsten and fluorine co-doping of VO2 films. Thin Solid Films. 402(1-2), 226-231. https://doi.org/10.1016/S0040-6090(01)01603-0
Keywords
METAL-INSULATOR-TRANSITION; optical coatings; phase transitions; photoelectron spectroscopy (PES); vanadium dioxide; vanadiumoxide