Konferenzpaper

Jahr der Veröffentlichung: 2001

Seiten: 1074-1077

Zeitschrift: Physica B: Condensed Matter

Bandnummer: 308

ISSN: 0921-4526

DOI Link: https://doi.org/10.1016/S0921-4526(01)00855-9

Konferenz: 21st International Conference on Defects in Semiconductors

Verlag: Elsevier

Abstract: 
The ternary compound semiconductor CuInS2 has attracted much attention owing to its potential applications in photovoltaic devices. We deposit CuInS2 films on Boat glass substrates by a reactive radio frequency sputter process using a Cu-In inlay target and H2S gas in one step. The morphology of the films was studied by Atomic Force Microscopy, X-ray Diffraction was used to check the crystal structure of the films. The composition of the layers was determined by Rutherford Back-scattering Spectroscopy and Energy-Dispersive X-ray Analysis. The electrical properties of the layers, i.e. the carrier concentration, Hall mobility, and specific resistivity and their dependencies on temperature were investigated by Hall effect measurements. (C) 2001 Elsevier Science B.V. All rights reserved.

Harvard-Zitierstil: He, Y., Polity, A., Gregor, R., Pfisterer, D., Österreicher, I., Hasselkamp, D., et al. (2001) Characterization of RF reactively sputtered Cu-In-S thin films, Physica B: Condensed Matter, 308, pp. 1074-1077. https://doi.org/10.1016/S0921-4526(01)00855-9

APA-Zitierstil: He, Y., Polity, A., Gregor, R., Pfisterer, D., Österreicher, I., Hasselkamp, D., & Meyer, B. (2001). Characterization of RF reactively sputtered Cu-In-S thin films. Physica B: Condensed Matter. 308, 1074-1077. https://doi.org/10.1016/S0921-4526(01)00855-9