Journalartikel

Jahr der Veröffentlichung: 2001

Zeitschrift: Physical review A

Bandnummer: 63

Heftnummer: 3

ISSN: 1050-2947

eISSN: 1094-1622

DOI Link: https://doi.org/10.1103/PhysRevA.63.032709

Verlag: American Physical Society

Abstract: 
Theoretical distorted-wave calculations and experimental crossed-beam measurements are carried out for the electron-impact ionization of atomic ions in the Ga isonuclear sequence. For Ga+ and Ga2+ the indirect process of 3d subshell excitation followed by autoionization is calculated to make a significant contribution to the total ionization cross section near threshold. For Ga3+, Ga4+, and Ga5+ the total ionization cross section is calculated to be dominated by direct ionization of the 3d subshell. For Ga6+, Ga7+, Ga8+, and Ga9+ the indirect process of 3p subshell excitation followed by autoionization is calculated to make a sizable contribution to the total ionization cross section. The distorted-wave predictions for the Ga ions are generally confirmed by the reasonable agreement found between theory and experiment along the isonuclear sequence.

Harvard-Zitierstil: Shaw, J., Pindzola, M., Steidl, M., Aichele, K., Hartenfeller, U., Hathiramani, D., et al. (2001) Electron-impact single ionization of atomic ions in the Ga isonuclear sequence, PHYSICAL REVIEW A, 63(3), Article 032709. https://doi.org/10.1103/PhysRevA.63.032709

APA-Zitierstil: Shaw, J., Pindzola, M., Steidl, M., Aichele, K., Hartenfeller, U., Hathiramani, D., Scheuermann, F., Westermann, M., & Salzborn, E. (2001). Electron-impact single ionization of atomic ions in the Ga isonuclear sequence. PHYSICAL REVIEW A. 63(3), Article 032709. https://doi.org/10.1103/PhysRevA.63.032709