Journalartikel

Jahr der Veröffentlichung: 2001

Seiten: 1-22

Zeitschrift: Solid State Communications

Bandnummer: 118

Heftnummer: 1

ISSN: 0038-1098

eISSN: 1879-2766

DOI Link: https://doi.org/10.1016/S0038-1098(01)00014-X

Verlag: Elsevier

Abstract: 
We present a comprehensive Raman study of self-energy effects in isotopically tailored silicon crystals at low temperature. Changes in the measured Raman spectra induced by isotope mass disorder are analyzed, including the weak excitations on the low-energy tail that arise approximately 30-60 cm(-1) below the main Raman peak. In order to obtain a detailed picture of the renormalization, we simulate all lineshape properties within the framework of the coherent potential approximation. Comparison with earlier studies on diamond, germanium and or-tin illuminates the common aspects of isotope disorder-induced effects in elemental semiconductors. (C) 2001 Elsevier Science Ltd. All rights reserved.

Harvard-Zitierstil: Widulle, F., Ruf, T., Konuma, M., Silier, I., Cardona, M., Kriegseis, W., et al. (2001) Isotope effects in elemental semiconductors: a Raman study of silicon, Solid State Communications, 118(1), pp. 1-22. https://doi.org/10.1016/S0038-1098(01)00014-X

APA-Zitierstil: Widulle, F., Ruf, T., Konuma, M., Silier, I., Cardona, M., Kriegseis, W., & Ozhogin, V. (2001). Isotope effects in elemental semiconductors: a Raman study of silicon. Solid State Communications. 118(1), 1-22. https://doi.org/10.1016/S0038-1098(01)00014-X