Journalartikel

Jahr der Veröffentlichung: 2000

Seiten: 4844-4849

Zeitschrift: Physical Review B

Bandnummer: 61

Heftnummer: 7

ISSN: 1098-0121

eISSN: 1550-235X

DOI Link: https://doi.org/10.1103/PhysRevB.61.4844

Verlag: American Physical Society

Abstract: 
We present experimental data on the band-structure and high-mobility transport properties of 6H and 4H-SiC epitaxial films based on optically detected cyclotron resonance investigations. From the orientational dependence of the electron effective mass in 6H-SiC we obtain direct evidence for the camels back nature of the conduction band between the M and L points. The broadening of the resonance signal in 4H-SIC as a function of temperature is used to extract information on electron mobilities and to conclude on the role of the different scattering mechanisms. Under high microwave powers an enhancement of the electron effective mass is found which is explained by a coupling of the electrons with longitudinal optical phonons.

Harvard-Zitierstil: Meyer, B., Hofmann, D., Volm, D., Chen, W., Son, N. and Janzén, E. (2000) Optically detected cyclotron resonance investigations on 4H and 6H SiC:: Band-structure and transport properties, Physical review B, 61(7), pp. 4844-4849. https://doi.org/10.1103/PhysRevB.61.4844

APA-Zitierstil: Meyer, B., Hofmann, D., Volm, D., Chen, W., Son, N., & Janzén, E. (2000). Optically detected cyclotron resonance investigations on 4H and 6H SiC:: Band-structure and transport properties. Physical review B. 61(7), 4844-4849. https://doi.org/10.1103/PhysRevB.61.4844