Conference paper

Adsorption and decomposition of methane on gallium oxide films


Authors listKohl, D; Ochs, T; Geyer, W; Fleischer, M; Meixner, H

Publication year1999

Pages140-145

JournalSensors and Actuators B: Chemical

Volume number59

Issue number2-3

ISSN0925-4005

DOI Linkhttps://doi.org/10.1016/S0925-4005(99)00211-7

ConferenceConference on Pollution Sensors for Environment - New Trends (POLCAP 98)

PublisherElsevier


Abstract
Surface reactions are investigated by a sensitive mass spectrometer. Ga2O3 films are exposed to square pulses of methane. From the experimental data the desorption energies and the frequency factors are calculated for H2O and CO2. Semiempirical Hartree-Fock calculations with the Modified Neglect of Diatomic Overlap - Parametric Method 3 (MNDO-PM3) method give information about the adsorption process. The energy gain of physisorption amounts to 0.27 eV. The Heat of Formation (HoF) of the chemisorbed CH3 group and the H atom is 4.05 eV lower in comparison to the value of the physisorbed methane. After the COlatt, group formation the energy gain is 7.33 eV. The binding energy of the formed COlatt, is calculated to 2.07 eV. The charge transfer is estimated using the Mulliken charges. A reaction scheme for the catalytic oxidation of methane by lattice oxygen is proposed. (C) 1999 Elsevier Science S.A. All rights reserved.



Citation Styles

Harvard Citation styleKohl, D., Ochs, T., Geyer, W., Fleischer, M. and Meixner, H. (1999) Adsorption and decomposition of methane on gallium oxide films, Sensors and Actuators B: Chemical, 59(2-3), pp. 140-145. https://doi.org/10.1016/S0925-4005(99)00211-7

APA Citation styleKohl, D., Ochs, T., Geyer, W., Fleischer, M., & Meixner, H. (1999). Adsorption and decomposition of methane on gallium oxide films. Sensors and Actuators B: Chemical. 59(2-3), 140-145. https://doi.org/10.1016/S0925-4005(99)00211-7



Keywords


GA2O3surface reactions

Last updated on 2025-01-04 at 22:53