Journalartikel
Autorenliste: Dirnstorfer, I; Hofmann, DM; Meister, D; Meyer, BK
Jahr der Veröffentlichung: 1999
Seiten: 1423-1428
Zeitschrift: Journal of Applied Physics
Bandnummer: 85
Heftnummer: 3
ISSN: 0021-8979
eISSN: 1089-7550
DOI Link: https://doi.org/10.1063/1.369273
Verlag: American Institute of Physics
Abstract:
Optical and electrical measurements were carried out on annealed CuIn(Ga)Se-2 (CIGS) thin films with Ga content of 10%. Annealing of as-grown In-rich CIGS in air/oxygen at 400 degrees C changes the photoluminescence spectrum to a spectrum which is usually obtained from as-grown Cu-rich CIGS. The annealing step reduces the donor density and the high compensation. This effect allows the investigation of the defect levels of In-rich CIGS which is not possible in as-grown layers due to the dominating fluctuating potentials. The activation energies for the donors and acceptors in In-rich CIGS were found to be 10 and 75 meV, respectively. The densities are in the order of 10(18) cm(-3) each, with a compensation ratio of 0.99. (C) 1999 American Institute of Physics. [S0021-8979(99)08503-5].
Zitierstile
Harvard-Zitierstil: Dirnstorfer, I., Hofmann, D., Meister, D. and Meyer, B. (1999) Postgrowth thermal treatment of CuIn(Ga)Se2:: Characterization of doping levels in In-rich thin films, Journal of Applied Physics, 85(3), pp. 1423-1428. https://doi.org/10.1063/1.369273
APA-Zitierstil: Dirnstorfer, I., Hofmann, D., Meister, D., & Meyer, B. (1999). Postgrowth thermal treatment of CuIn(Ga)Se2:: Characterization of doping levels in In-rich thin films. Journal of Applied Physics. 85(3), 1423-1428. https://doi.org/10.1063/1.369273
Schlagwörter
CUINSE2; MOLECULAR-BEAM EPITAXY; SOLAR-CELLS