Journalartikel

Jahr der Veröffentlichung: 1999

Seiten: 443-452

Zeitschrift: Journal of Physics B: Atomic, Molecular and Optical Physics

Bandnummer: 32

Heftnummer: 2

ISSN: 0953-4075

DOI Link: https://doi.org/10.1088/0953-4075/32/2/023

Verlag: IOP Publishing

Abstract: 
Cross sections for electron-impact ionization of Si4+ and Si5+ ions have been calculated in the distorted-wave approximation. In the present calculations both direct-ionization and excitation-autoionization processes are included. For Si4+ ions, the cross sections are calculated for ionization from both the 2s(2)2p(6) ground configuration and the 2s(2)2p(5) 3s excited configuration. Excitation-autoionization substantially contributes to the ionization of the 2s(2)2p(5)3s excited configuration and is approximately a factor of four above direct ionization at energies below the ground-state threshold. For ionization from the ground configurations of both Si4+ and Si5+ ions, the direct process dominates the total ionization cross section. and contributions of excitation-autoionization are very small. The present results are in reasonable agreement with the experimental measurements of Thompson and Gregory (Thompson J S and Gregory D C 1994 Phys. Rev. A 50 1377). Remaining discrepancies between the experiment and theory are discussed.

Harvard-Zitierstil: Teng, H. (1999) Distorted-wave calculations for electron-impact ionization of Si⁴⁺ and Si⁵⁺, Journal of Physics B: Atomic, Molecular and Optical Physics, 32(2), pp. 443-452. https://doi.org/10.1088/0953-4075/32/2/023

APA-Zitierstil: Teng, H. (1999). Distorted-wave calculations for electron-impact ionization of Si⁴⁺ and Si⁵⁺. Journal of Physics B: Atomic, Molecular and Optical Physics. 32(2), 443-452. https://doi.org/10.1088/0953-4075/32/2/023