Konferenzpaper

Jahr der Veröffentlichung: 1999

Seiten: 287-288

Zeitschrift: Physica scripta. Topical issues

Bandnummer: T80B

ISSN: 0281-1847

DOI Link: https://doi.org/10.1238/Physica.Topical.080a00287

Konferenz: IX International Conference on Physics of Highly Charged Ions

Verlag: Royal Swedish Academy of Sciences

Abstract: 

Electron impact ionization cross sections sigma(q,q+n) for gallium ions have been measured for the reaction of Gaq+ --> Ga(((q+n)+))+ + (n+l)e for single (n = 1, q = 1, 3, 8) and triple (n = 3, q = 3, 4) ionization. The measurements have been performed using the crossed-beams technique in an energy range from the respective ionization threshold up to 1 keV; partly up to 6 keV.

The cross sections for single ionization of ions in the charge state 9 = 1 and 3 show contributions below the ground state threshold caused by ionization of ions in excited, long-lived states in the parent ion beam. The cross sections are compared with the semiempirical Lotz formula.

The cross section for Ga4+ triple ionization shows contributions from inner-shell processes. Semiempirical formulae are in good agreement with the experimental data only at energies below the cross section maximum.

Harvard-Zitierstil: Steidl, M., Aichele, K., Hartenfeller, U., Hathiramani, D., Scheuermann, F., Westermann, M., et al. (1999) Electron impact ionization of gallium ions, PHYSICA SCRIPTA, T80B, pp. 287-288. https://doi.org/10.1238/Physica.Topical.080a00287

APA-Zitierstil: Steidl, M., Aichele, K., Hartenfeller, U., Hathiramani, D., Scheuermann, F., Westermann, M., & Salzborn, E. (1999). Electron impact ionization of gallium ions. PHYSICA SCRIPTA. T80B, 287-288. https://doi.org/10.1238/Physica.Topical.080a00287