Journalartikel
Autorenliste: Wimbauer, T; Brandt, MS; Bayerl, MW; Reinacher, NM; Stutzmann, M; Hofmann, DM; Mochizuki, Y; Mizuta, M
Jahr der Veröffentlichung: 1998
Seiten: 4892-4902
Zeitschrift: Physical Review B
Bandnummer: 58
Heftnummer: 8
ISSN: 1098-0121
eISSN: 1550-235X
DOI Link: https://doi.org/10.1103/PhysRevB.58.4892
Verlag: American Physical Society
Abstract:
Using optically and electrically detected magnetic resonance (ODMR and EDMR, respectively), recombination in a GaAs/Al0.4Ga0.6As heterostructure is studied. ODMR performed at 35 GHz shows the presence of Ga interstitials in a GaAs quantum well codoped with Si and Be. Depending on the contacts used, EDMR (performed both at 9 and 34 GHz) is able to detect surface defects, intrinsic defects (Ga interstitial and As-Gr antisite) as well as the Cr4+ transition-metal impurity. The location of the paramagnetic states in the heterostructure was determined with EDMR using light of different absorption length for the selective excitation of photoconductivity, combined with a phase shift analysis of the different EDMR signals with respect to the modulation reference. The temperature and microwave power dependence of the EDMR signal amplitude is discussed, providing guidelines for the experimental conditions needed to perform EDMR on GaAs. Finally, using X-band and Q-band detection, the defect parameters (g-factor and hyperfine constants) for the Ga interstitial an determined to g = 2.006, A(69) = 0.048 cm(-1), and A(71)= 0.061 cm(-1). These results are compared to previous observations.
Zitierstile
Harvard-Zitierstil: Wimbauer, T., Brandt, M., Bayerl, M., Reinacher, N., Stutzmann, M., Hofmann, D., et al. (1998) Recombination centers in GaAs/Al0.4Ga0.6As heterostructures investigated by optically and electrically detected magnetic resonance, Physical review B, 58(8), pp. 4892-4902. https://doi.org/10.1103/PhysRevB.58.4892
APA-Zitierstil: Wimbauer, T., Brandt, M., Bayerl, M., Reinacher, N., Stutzmann, M., Hofmann, D., Mochizuki, Y., & Mizuta, M. (1998). Recombination centers in GaAs/Al0.4Ga0.6As heterostructures investigated by optically and electrically detected magnetic resonance. Physical review B. 58(8), 4892-4902. https://doi.org/10.1103/PhysRevB.58.4892
Schlagwörter
ALXGA1-XAS; GAAS; HYDROGENATED AMORPHOUS-SILICON; LIGHT-EMITTING-DIODES; Native defects; SPIN-DEPENDENT RECOMBINATION