Journalartikel

Characterization of CuIn(Ga)Se2 thin films -: II.: In-rich layers


Autorenliste: Dirnstorfer, I; Wagner, M; Hofmann, DM; Lampert, MD; Karg, F; Meyer, BK

Jahr der Veröffentlichung: 1998

Seiten: 163-175

Zeitschrift: physica status solidi (a) – applications and materials science

Bandnummer: 168

Heftnummer: 1

ISSN: 0031-8965

Verlag: Wiley


Abstract: 
In-rich CuIn(Ga)Se-2 thin films are characterized by optical and electrical measurements. The results are consistently explained in the Shklovskij/Efros model appropriate for highly defective and highly compensated semiconductors. The dominant radiative recombination is of tail-impurity type at low temperatures and low excitation powers, and of band-impurity type at high temperatures and/or high excitation densities. The analysis of the data yields that the impurity content is in the order of 10(18) cm(-3) while the free carrier (hole) concentration at room temperature is in the order of 10(16) cm(-3). The impurity density increases with increasing deviation of the Cu/(In+Ga) ratio from stoichiometry.



Zitierstile

Harvard-Zitierstil: Dirnstorfer, I., Wagner, M., Hofmann, D., Lampert, M., Karg, F. and Meyer, B. (1998) Characterization of CuIn(Ga)Se2 thin films -: II.: In-rich layers, physica status solidi (a) – applications and materials science, 168(1), pp. 163-175. https://doi.org/10.1002/(SICI)1521-396X(199807)168:1<163::AID-PSSA163>3.3.CO;2-K

APA-Zitierstil: Dirnstorfer, I., Wagner, M., Hofmann, D., Lampert, M., Karg, F., & Meyer, B. (1998). Characterization of CuIn(Ga)Se2 thin films -: II.: In-rich layers. physica status solidi (a) – applications and materials science. 168(1), 163-175. https://doi.org/10.1002/(SICI)1521-396X(199807)168:1<163::AID-PSSA163>3.3.CO;2-K


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