Journal article

Characterization of CuIn(Ga)Se2 thin films -: I.: Cu-rich layers


Authors list: Wagner, M; Dirnstorfer, I; Hofmann, DM; Lampert, MD; Karg, F; Meyer, BK

Publication year: 1998

Pages: 131-142

Journal: physica status solidi (a) – applications and materials science

Volume number: 167

Issue number: 1

ISSN: 0031-8965

Publisher: Wiley


Abstract: 
Cu-rich and nearly stoichiometric CuIn(Ga)Se-2 thin films prepared by the rapid thermal process (RTP) are investigated by electrical and optical methods. The experiments yield that three phases are present in the layers. Cu2-xSe, which determines the conductivity of the layers but does not contribute to the radiative recombinations is observed. CuIn1-xGaxSe2 causes a broad unstructured radiative recombination with a peak energy in the range from 1.0 to 1.1 eV, dependent on x. Recombinations with zero-phonon lines at 0.96 and 0.90 eV arise from CuInSe2. They involve a shallow donor with a binding energy of (10 +/- 5) meV and two accepters with binding energies of (75 +/- 10) meV and (140 +/- 10) meV, respectively. All features of these recombinations are well described in the donor-acceptor pair recombination model.



Citation Styles

Harvard Citation style: Wagner, M., Dirnstorfer, I., Hofmann, D., Lampert, M., Karg, F. and Meyer, B. (1998) Characterization of CuIn(Ga)Se2 thin films -: I.: Cu-rich layers, physica status solidi (a) – applications and materials science, 167(1), pp. 131-142. https://doi.org/10.1002/(SICI)1521-396X(199805)167:1<131::AID-PSSA131>3.0.CO;2-F

APA Citation style: Wagner, M., Dirnstorfer, I., Hofmann, D., Lampert, M., Karg, F., & Meyer, B. (1998). Characterization of CuIn(Ga)Se2 thin films -: I.: Cu-rich layers. physica status solidi (a) – applications and materials science. 167(1), 131-142. https://doi.org/10.1002/(SICI)1521-396X(199805)167:1<131::AID-PSSA131>3.0.CO;2-F


Keywords

CUINSE2; FUNDAMENTAL ABSORPTION-EDGE

Last updated on 2025-02-04 at 06:16