Conference paper

The temperature dependence of the electron g-factor in CdTe


Authors listMeyer, BK; Hofstaetter, A; Leib, U; Hofmann, DM

Publication year1998

Pages1118-1122

JournalJournal of Crystal Growth

Volume number184

ISSN0022-0248

DOI Linkhttps://doi.org/10.1016/S0022-0248(97)00742-2

Conference8th International Conference on II-VI Compounds

PublisherElsevier


Abstract
We determined the temperature dependence of the electron (donor) Lande factor (g*) in bulk CdTe by electron paramagnetic resonance experiments. In the temperature range from 4.2 to 66K the dependence is g* = -1.682 + 2.97 x 10(-4) T. The results are in qualitative agreement with recent spin-quantum-beat experiments. Possibilities to account for this behaviour in k.p calculations are suggested. (C) 1998 Elsevier Science B.V. All rights reserved.



Citation Styles

Harvard Citation styleMeyer, B., Hofstaetter, A., Leib, U. and Hofmann, D. (1998) The temperature dependence of the electron g-factor in CdTe, Journal of Crystal Growth, 184, pp. 1118-1122. https://doi.org/10.1016/S0022-0248(97)00742-2

APA Citation styleMeyer, B., Hofstaetter, A., Leib, U., & Hofmann, D. (1998). The temperature dependence of the electron g-factor in CdTe. Journal of Crystal Growth. 184, 1118-1122. https://doi.org/10.1016/S0022-0248(97)00742-2



Keywords


LANDE G-FACTOR

Last updated on 2025-01-04 at 22:27