Conference paper

Editor list: Tomlinson, RD; Hill, AE; Pilkington, RD

Publication year: 1998

Pages: 233-236

Journal: Institute of Physics conference series

Volume number: 152

ISSN: 0951-3248

ISBN: 0-7503-0438-3

Conference: 11th International Conference on Ternary and Multinary Compounds (ICTMC-11)

Publisher: IOP Publishing Ltd

Title of series: INSTITUTE OF PHYSICS CONFERENCE SERIES

Abstract: 
Optical experiments were carried out on In-rich CuIn(Ga)Se-2 thin films prepared by rapid thermal processing (RTP). The In-rich layers show a single, broad and structurless luminescence band in the spectral range from 0.8 eV to 1.05 eV. The excitation power dependence and the temperature dependence of the recombination are well described by switching over from tail-impurity recombination to band-impurity recombination in a highly compensated semiconductor. The impurity concentrations are determined to be in the 10(18) cm(-3) range, while the carrier concentrations at room temperature are about 10(16) cm(-3).

Harvard Citation style: Dirnstorfer, I., Wagner, M., Hofmann, D., Lampert, M., Karg, F. and Meyer, B. (1998) CuIn(Ga)Se₂ solar cells:: Characterization of the absorber material, INSTITUTE OF PHYSICS CONFERENCE SERIES, 152, pp. 233-236

APA Citation style: Dirnstorfer, I., Wagner, M., Hofmann, D., Lampert, M., Karg, F., & Meyer, B. (1998). CuIn(Ga)Se₂ solar cells:: Characterization of the absorber material. INSTITUTE OF PHYSICS CONFERENCE SERIES. 152, 233-236.