Konferenzpaper

Jahr der Veröffentlichung: 1998

Seiten: 251-256

Zeitschrift: Hyperfine Interactions

Bandnummer: 114

Heftnummer: 1-4

ISSN: 0304-3843

DOI Link: https://doi.org/10.1023/A:1012699227657

Konferenz: 3rd Euroconference on Atomic Physics with Stored Highly Charged Ions

Verlag: Springer

Abstract: 
The enhancement of dielectronic recombination by applied electric fields has been observed and measured for the first time in a wide range of controlled and measurable fields using multiply charged ions. The heavy ion storage ring, CRYRING, at stockholm University was used to store st beam of Si11+ and collide it with a cold electron target. The observation of a substantial monotonic increase of the rate coefficient for the group of higher Rydberg states is in puzzling disagreement with theoretical calculations of electric field enhanced dielectronic recombination.

Harvard-Zitierstil: Bartsch, T., Muller, A., Spies, W., Linkemann, J., Danared, H., DeWitt, D., et al. (1998) Field enhanced dielectronic recombination of Si¹¹⁺ ions, Hyperfine Interactions, 114(1-4), pp. 251-256. https://doi.org/10.1023/A:1012699227657

APA-Zitierstil: Bartsch, T., Muller, A., Spies, W., Linkemann, J., Danared, H., DeWitt, D., Gao, H., Zong, W., Schuch, R., Wolf, A., & Dunn, G. (1998). Field enhanced dielectronic recombination of Si¹¹⁺ ions. Hyperfine Interactions. 114(1-4), 251-256. https://doi.org/10.1023/A:1012699227657