Journal article

Publication year: 1998

Pages: 377-384

Journal: Journal of Crystal Growth

Volume number: 183

Issue number: 3

ISSN: 0022-0248

DOI Link: https://doi.org/10.1016/S0022-0248(97)00352-7

Publisher: Elsevier

Abstract: 
Melt grown crystals in the Cu-In-Se system show the phenomenon of phase segregation into a nearly stoichiometric CuInSe2 compound with chalcopyrite structure and a strongly copper deficient compound with an ordered defect chalcopyrite (ODC) structure. The photoluminescence of such a two phase Bridgman-grown Cu-In-Se crystal with the selected composition Cu0.85In1.05Se2 has two broad emission bands: a transition A around 0.93 eV and a transition B around 1.10 eV, the latter being above the bandgap energy of CuInSe2. Both transitions A and B exhibit donor-acceptor pair type recombination behaviour. Spatially resolved cathodoluminescence shows that the two emission energies come from different regions of the crystal and have the form of micrometer-sized stripes. We conclude that the two transitions A and B originate from the two different phases which penetrate the crystal in growth direction as micrometer-sized lamellae [M. Hornung et al., J. Crystal Growth 154 (1995) 315]. From the emission energies, transition A at 0.93 eV can be attributed to the CuInSe2 compound whereas transition B at 1.10 eV belongs to the ODC phase. (C) 1998 Elsevier Science B.V. All rights reserved.

Harvard Citation style: Lampert, M., Meyer, B., Hornung, M., Benz, K., Petersson, A. and Samuelson, L. (1998) Characterization of bulk Cu_0.85In_1.05Se₂ by photoluminescence and cathodoluminescence, Journal of Crystal Growth, 183(3), pp. 377-384. https://doi.org/10.1016/S0022-0248(97)00352-7

APA Citation style: Lampert, M., Meyer, B., Hornung, M., Benz, K., Petersson, A., & Samuelson, L. (1998). Characterization of bulk Cu_0.85In_1.05Se₂ by photoluminescence and cathodoluminescence. Journal of Crystal Growth. 183(3), 377-384. https://doi.org/10.1016/S0022-0248(97)00352-7