Bulk crystals in the system Cu-In-Ga-Se with initial Ga/Ga+In=0.1 to 0.3. Growth from the melt and characterization - Research portal of Justus Liebig University Giessen:

Conference paper

Bulk crystals in the system Cu-In-Ga-Se with initial Ga/Ga+In=0.1 to 0.3. Growth from the melt and characterization

Authors list: Beilharz, C; Benz, KW; Dirnstorfer, I; Meyer, BK

Editor list: Tomlinson, RD; Hill, AE; Pilkington, RD

Publication year: 1998

Pages: 19-22

Journal: Institute of Physics conference series

Volume number: 152

ISSN: 0951-3248

ISBN: 0-7503-0438-3

Conference: 11th International Conference on Ternary and Multinary Compounds (ICTMC-11)

Publisher: IOP Publishing Ltd

Title of series: INSTITUTE OF PHYSICS CONFERENCE SERIES

Abstract:
Copper Indium Gallium Selenide bulk crystals with integral compositions on the In2Se3-rich side of the quasi-binary section Cu2Se-In2Se3 in the system Cu-In-Se, in which 10 to 30% of the Indium were replaced by Gallium, were grown using the vertical gradient freeze method. The crystals were characterized using energy-dispersive X-ray spectroscopy, scanning electron microscopy, interference contrast microscopy and photoluminescence.

Citation Styles

Harvard Citation style: Beilharz, C., Benz, K., Dirnstorfer, I. and Meyer, B. (1998) Bulk crystals in the system Cu-In-Ga-Se with initial Ga/Ga+In=0.1 to 0.3. Growth from the melt and characterization, INSTITUTE OF PHYSICS CONFERENCE SERIES, 152, pp. 19-22

APA Citation style: Beilharz, C., Benz, K., Dirnstorfer, I., & Meyer, B. (1998). Bulk crystals in the system Cu-In-Ga-Se with initial Ga/Ga+In=0.1 to 0.3. Growth from the melt and characterization. INSTITUTE OF PHYSICS CONFERENCE SERIES. 152, 19-22.

SDG Areas

7 Affordable and clean energy