Conference paper

X-band ENDOR of boron and beryllium acceptors in silicon carbide


Authors listHofstaetter, A; Meyer, BK; Scharmann, A; Baranov, PG; Ilyin, IV; Mokhov, EN

Editor listPensl, G; Morkoc, H; Monemar, B; Janzen, E

Publication year1998

Pages595-598

JournalMaterials Science Forum

Volume number264-2

ISSN0255-5476

ISBN0-87849-790-0

DOI Linkhttps://doi.org/10.4028/www.scientific.net/MSF.264-268.595

Conference7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97)

PublisherTrans Tech Publications

Title of seriesMATERIALS SCIENCE FORUM


Abstract
An ENDOR investigation has been performed on the shallow boron acceptor in 3C-SiC. For both isotopes (B-10 and B-11) hyperfine and quadrupole parameters were determined with high precision. Their comparison reveals practically no difference, limiting a possible isotope effect on the centre structure to about 5%. For Be doped 6H-SiC the combination of ENDOR and a precise X-band EPR measurement allowed the unambiguous identification of the beryllium acceptor at the hexagonal site and the evaluation of its g-, hyperfine and quadrupole data. For Be at the two quasi-cubic sites an estimation is given.



Citation Styles

Harvard Citation styleHofstaetter, A., Meyer, B., Scharmann, A., Baranov, P., Ilyin, I. and Mokhov, E. (1998) X-band ENDOR of boron and beryllium acceptors in silicon carbide, Materials Science Forum, 264-2, pp. 595-598. https://doi.org/10.4028/www.scientific.net/MSF.264-268.595

APA Citation styleHofstaetter, A., Meyer, B., Scharmann, A., Baranov, P., Ilyin, I., & Mokhov, E. (1998). X-band ENDOR of boron and beryllium acceptors in silicon carbide. Materials Science Forum. 264-2, 595-598. https://doi.org/10.4028/www.scientific.net/MSF.264-268.595



Keywords


boron isotopesENDORhyperfine interaction

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