Journalartikel

Jahr der Veröffentlichung: 1997

Seiten: 2233-2236

Zeitschrift: Physical Review Letters

Bandnummer: 79

Heftnummer: 12

ISSN: 0031-9007

DOI Link: https://doi.org/10.1103/PhysRevLett.79.2233

Verlag: American Physical Society

Abstract: 
The enhancement of dielectronic recombination by applied electric fields has been observed and measured for the first time in a wide range of controlled and measurable fields using multiply charged ions. The heavy ion storage ring CRYRING at Stockholm University was used to store a beam of Si11+ and collide it with a cold electron target. Rydberg resonances up to n = 25 are resolved for both the 2(p3/2) and 2(p1/2) series. The observation of a substantial monotonic increase of the rate coefficient for the group of higher Rydberg states is in puzzling disagreement with theoretical calculations of electric field enhanced dielectronic recombination.

Harvard-Zitierstil: Bartsch, T., Muller, A., Spies, W., Linkemann, J., Danared, H., DeWitt, D., et al. (1997) Field enhanced dielectronic recombination of Si11+ ions, Physical Review Letters, 79(12), pp. 2233-2236. https://doi.org/10.1103/PhysRevLett.79.2233

APA-Zitierstil: Bartsch, T., Muller, A., Spies, W., Linkemann, J., Danared, H., DeWitt, D., Gao, H., Zong, W., Schuch, R., Wolf, A., Dunn, G., Pindzola, M., & Griffin, D. (1997). Field enhanced dielectronic recombination of Si11+ ions. Physical Review Letters. 79(12), 2233-2236. https://doi.org/10.1103/PhysRevLett.79.2233