Journal article

Plasmon excitation in vanadium dioxide films


Authors listFelde, B; Niessner, W; Schalch, D; Scharmann, A; Werling, M

Publication year1997

Pages61-65

JournalThin Solid Films

Volume number305

Issue number1-2

ISSN0040-6090

DOI Linkhttps://doi.org/10.1016/S0040-6090(97)00148-X

PublisherElsevier


Abstract
Thermochromic vanadium dioxide (VO2) films, which are considered as intelligent window coatings, have been deposited in mixed argon/oxygen atmospheres. The properties of the films have been studied by electron energy loss spectroscopy (EELS) and ultraviolet-excited photoelectron spectrometry (UPS) at different temperatures in order to get a better understanding of the physics of the metal-semiconductor transition in thin polycrystalline VO2 films. The present article mainly discusses plasmon excitation, which is found at an electron energy loss of 1.2 eV, both in the semiconducting and the metallic phase. This is in contrast to results from a single crystalline material. (C) 1997 Elsevier Science S.A.



Citation Styles

Harvard Citation styleFelde, B., Niessner, W., Schalch, D., Scharmann, A. and Werling, M. (1997) Plasmon excitation in vanadium dioxide films, Thin Solid Films, 305(1-2), pp. 61-65. https://doi.org/10.1016/S0040-6090(97)00148-X

APA Citation styleFelde, B., Niessner, W., Schalch, D., Scharmann, A., & Werling, M. (1997). Plasmon excitation in vanadium dioxide films. Thin Solid Films. 305(1-2), 61-65. https://doi.org/10.1016/S0040-6090(97)00148-X



Keywords


METAL-INSULATOR-TRANSITIONplasmonsvanadium dioxideVO2

Last updated on 2025-02-04 at 06:12