Konferenzpaper

Herausgeberliste: Shur, MS; Suris, RA

Jahr der Veröffentlichung: 1997

Seiten: 893-896

Zeitschrift: Institute of Physics conference series

Heftnummer: 155

ISSN: 0951-3248

ISBN: 0-7503-0452-9

Konferenz: 23rd International Symposium on Compound Semiconductors

Verlag: IOP Publishing Ltd

Serientitel: INSTITUTE OF PHYSICS CONFERENCE SERIES

Abstract: 
We applied optically detected magnetic resonance and exciton level-anticrossing spectroscopy for characterization of GaAs/AlAs superlattices grown under different conditions including growth interruptions. A difference in exchange splitting of excitons localized at opposite interfaces was found and the nature of an additional low-energy emission line in superlattices grown with interruptions after GaAs layers was clarified. Linear polarization at anticrossings in type-I SL revealed an existence of a splitting of the exciton radiative levels.

Harvard-Zitierstil: Baranov, P., Romanov, N., Hofstaetter, A., Scharmann, A., Schnorr, C., Ahlers, F., et al. (1997) Application of ODMR and level-anticrossing spectroscopy for characterization of GaAs/AlAs superlattices., INSTITUTE OF PHYSICS CONFERENCE SERIES(155), pp. 893-896

APA-Zitierstil: Baranov, P., Romanov, N., Hofstaetter, A., Scharmann, A., Schnorr, C., Ahlers, F., & Pierz, K. (1997). Application of ODMR and level-anticrossing spectroscopy for characterization of GaAs/AlAs superlattices.. INSTITUTE OF PHYSICS CONFERENCE SERIES(155), 893-896.