Konferenzpaper

Jahr der Veröffentlichung: 1997

Seiten: 177-183

Zeitschrift: Hyperfine Interactions

Bandnummer: 108

Heftnummer: 1-3

ISSN: 0304-3843

DOI Link: https://doi.org/10.1023/A:1012650426923

Konferenz: 2nd Euroconference on Atomic Physics with Stored Highly Charged Ions

Verlag: Springer

Abstract: 
Cross sections for dielectronic recombination can be influenced by the presence of external electric fields in the electron-ion collision region. In most of the previous experiments with multiply charged ions such fields were present but unknown. Therefore, comparisons of experimental results with theoretical calculations were ambiguous: for obtaining best possible agreement, theory could use the field strength as a free parameter to adjust the calculated cross sections to the experiment. In recent measurements with 10 MeV/u Si11+ ions stored in CRYRING, controlled external motional electric fields up to 183 V/cm were introduced in the electron cooler. Significant cross section enhancements were found for Rydberg states n > 20.

Harvard-Zitierstil: Bartsch, T., Muller, A., Spies, W., Linkemann, J., Danared, H., DeWitt, D., et al. (1997) Measurement of field effects on dielectronic recombination of Si11+ ions, Hyperfine Interactions, 108(1-3), pp. 177-183. https://doi.org/10.1023/A:1012650426923

APA-Zitierstil: Bartsch, T., Muller, A., Spies, W., Linkemann, J., Danared, H., DeWitt, D., Gao, H., Zong, W., Schuch, R., Wolf, A., & Dunn, G. (1997). Measurement of field effects on dielectronic recombination of Si11+ ions. Hyperfine Interactions. 108(1-3), 177-183. https://doi.org/10.1023/A:1012650426923