Konferenzpaper

Jahr der Veröffentlichung: 1996

Seiten: 297-302

Zeitschrift: Sensors and Actuators B: Chemical

Bandnummer: 36

Heftnummer: 1-3

ISSN: 0925-4005

DOI Link: https://doi.org/10.1016/S0925-4005(97)80085-8

Konferenz: Proceedings of the 6th International Meeting on Chemical Sensors

Verlag: Elsevier

Abstract: 
N-type semiconducting Ga2O3 thin-films which are stable at high temperatures are used as a new basic material for gas sensors. This study investigates the extent to which a gas-filtering layer of compact, amorphous SiO2 is capable of modifying gas sensitivity. Using a sputtering technique and a Si target, the SiO2 layer, which, typically, has thicknesses of 30 nm and 300 nm, is deposited onto the Ga2O3 gas sensor. It was found that sensors with this surface layer structure had an extremely high specificity for H-2 when they were operated at 700 degrees C. Other gases that were tested included CO, CO2, CH4, isobutene, ethanol, acetone, NO, NH3; variations of humidity and oxygen content were also investigated. There was a marked increase in H-2-sensitivity between the modified and unmodified sensors.

Harvard-Zitierstil: Fleischer, M., Seth, M., Kohl, C. and Meixner, H. (1996) A selective H-2 sensor implemented using Ga2O3 thin-films which are covered with a gas-filtering SiO2 layer, Sensors and Actuators B: Chemical, 36(1-3), pp. 297-302. https://doi.org/10.1016/S0925-4005(97)80085-8

APA-Zitierstil: Fleischer, M., Seth, M., Kohl, C., & Meixner, H. (1996). A selective H-2 sensor implemented using Ga2O3 thin-films which are covered with a gas-filtering SiO2 layer. Sensors and Actuators B: Chemical. 36(1-3), 297-302. https://doi.org/10.1016/S0925-4005(97)80085-8