Journalartikel

Jahr der Veröffentlichung: 1996

Seiten: 848-854

Zeitschrift: JETP Letters

Bandnummer: 63

Heftnummer: 10

ISSN: 0021-3640

DOI Link: https://doi.org/10.1134/1.567101

Verlag: Springer

Abstract: 
Electron-nuclear double resonance spectra of deep-boron accepters in silicon carbide have been observed. The quadrupole and hyperfine interaction constants are determined. A sharp decrease of the quadrupole interaction and suppression of the anisotropic part of the hyperfine interaction, as compared with shallow-boron accepters, are found, The observed effects are explained by the motion of holes inside the deep-boron acceptor. (C) 1996 American Institute of Physics.

Harvard-Zitierstil: Baranov, P., Mokhov, E., Hofstetter, A. and Sharmann, A. (1996) Electron-nuclear double resonance of deep-boron acceptors in silicon carbide, JETP Letters, 63(10), pp. 848-854. https://doi.org/10.1134/1.567101

APA-Zitierstil: Baranov, P., Mokhov, E., Hofstetter, A., & Sharmann, A. (1996). Electron-nuclear double resonance of deep-boron acceptors in silicon carbide. JETP Letters. 63(10), 848-854. https://doi.org/10.1134/1.567101