Journalartikel

Jahr der Veröffentlichung: 2020

Seiten: 14397-14400

Zeitschrift: Dalton Transactions

Bandnummer: 49

Heftnummer: 41

ISSN: 1477-9226

eISSN: 1477-9234

DOI Link: https://doi.org/10.1039/d0dt03427d

Verlag: Royal Society of Chemistry

Abstract: 
Bismuth halides represent an emergent class of materials that combines semiconductor properties with non-toxic constituents. However, many simple bismuth halide compounds feature band-gaps that are significantly higher than those of the lead halide perovskites, which they are supposed to replace. One way to address this issue is the preparation of multinary metal halide materials that feature an additional metal ion. Here, we report on the synthesis and properties of (HPy)(2)(Py)CuBi3I12 (1) a new copper iodido bismuthate, a photoconductor, which shows a low band gap of 1.59 eV and good thermal and air stability.

Harvard-Zitierstil: Möbs, J., Gerhard, M. and Heine, J. (2020) (HPy)2(Py)CuBi3I12, a low bandgap metal halide photoconductor, Dalton Transactions, 49(41), pp. 14397-14400. https://doi.org/10.1039/d0dt03427d

APA-Zitierstil: Möbs, J., Gerhard, M., & Heine, J. (2020). (HPy)2(Py)CuBi3I12, a low bandgap metal halide photoconductor. Dalton Transactions. 49(41), 14397-14400. https://doi.org/10.1039/d0dt03427d