Konferenzpaper

Jahr der Veröffentlichung: 2020

Zeitschrift: Journal of Physics: Conference Series

Bandnummer: 1412

DOI Link: https://doi.org/10.1088/1742-6596/1412/15/152024

Konferenz: 31st International Conference on Photonic, Electronic and Atomic Collisions (ICPEAC XXXI)

Verlag: IOP Publishing: Conference Series

Abstract: 

Single and multiple photoionization of Si¹⁺, Si²⁺, and Si³⁺ ions have been investigated near the silicon K-edge using the PIPE setup at beamline P04 of the synchrotron light source PETRA III operated by DESY in Hamburg, Germany. Pronounced resonance structures are observed for all ions which are associated with excitation or ionization of a K-shell electron. The experimental cross sections are compared with results from theoretical calculations.

Harvard-Zitierstil: Buhr, T., Stock, S., Perry-Sassmannshausen, A., Reinwardt, S., Martins, M., Ricz, S., et al. (2020) Photoionization of low-charged silicon ions, Journal of Physics: Conference Series, 1412, Article 152024. https://doi.org/10.1088/1742-6596/1412/15/152024

APA-Zitierstil: Buhr, T., Stock, S., Perry-Sassmannshausen, A., Reinwardt, S., Martins, M., Ricz, S., Müller, A., Fritzsche, S., & Schippers, S. (2020). Photoionization of low-charged silicon ions. Journal of Physics: Conference Series. 1412, Article 152024. https://doi.org/10.1088/1742-6596/1412/15/152024