Konferenzpaper

Jahr der Veröffentlichung: 1999

Seiten: 305-306

Zeitschrift: Physica scripta. Topical issues

Bandnummer: T80B

ISSN: 0281-1847

DOI Link: https://doi.org/10.1238/Physica.Topical.080a00305

Konferenz: IX International Conference on Physics of Highly Charged Ions

Verlag: Royal Swedish Academy of Sciences

Abstract: 
The enhancement of dielectronic recombination of multiply charged ions by external electric fields has been studied under controlled conditions. The heavy ion storage rings CRYRING at Stockholm University and the heavy ion storage ring TSR at the Max-Planck-Institut in Heidelberg were used to store beams of Si11+ lion energy 280 MeV) and Cl14+ lion energies 250 MeV and 110 MeV), respectively Recombination in the electron cooler has been measured over energy ranges covering ail resonances due to 2s --> 2p core exitation. External electric fields up to 183 V/cm at CRYRING and up to 379 V/cm at the TSR have been applied. In the TSR experiment the influence of different magnetic guiding fields as well as the influence of different electron densities in the electron cooler on the recombination rate was investigated. A significant rate enhancement was found for 1s(2) 2p nl Rydberg resonances with n > 25 for Si11+ ions and n > 20 for Cl14+ ions.

Harvard-Zitierstil: Bartsch, T., Müller, A., Spies, W., Linkemann, J., Schippers, S., Brandau, C., et al. (1999) Field Enhanced Dielectronic Recombination of Si11+ and Cl14+ Ions, Physica scripta. Topical issues, T80B, pp. 305-306. https://doi.org/10.1238/Physica.Topical.080a00305

APA-Zitierstil: Bartsch, T., Müller, A., Spies, W., Linkemann, J., Schippers, S., Brandau, C., Danared, H., DeWitt, D., Gao, H., Zong, W., Schuch, R., Wolf, A., Gwinner, G., Saghiri, A., Schmitt, M., Beutelspacher, M., Grieser, M., & Dunn, G. (1999). Field Enhanced Dielectronic Recombination of Si11+ and Cl14+ Ions. Physica scripta. Topical issues. T80B, 305-306. https://doi.org/10.1238/Physica.Topical.080a00305