Journal article

The interaction of hydrogenic ions with metal and semiconductor surfaces


Authors listLimburg, J; Das, J; Schippers, S; Hoekstra, R; Morgenstern, R

Publication year1994

Pages355-364

JournalSurface Science

Volume number313

Issue number3

ISSN0039-6028

DOI Linkhttps://doi.org/10.1016/0039-6028(94)90056-6

PublisherElsevier


Abstract

We present K-Auger spectra arising from collisions of hydrogenic C, N, O, F and Ne ions with p-conducting Si(100), Ni(110) and polycrystalline W surfaces for different beam energies and observation angles. These spectra exhibit sharp peaks which, using Hartree-Fock atomic structure calculations, can be assigned to distinct projectile states prior to KLL decay. Moreover, we find that the measured spectra show target-specific features which can be explained by different free electron densities in metals and silicon.




Citation Styles

Harvard Citation styleLimburg, J., Das, J., Schippers, S., Hoekstra, R. and Morgenstern, R. (1994) The interaction of hydrogenic ions with metal and semiconductor surfaces, Surface Science, 313(3), pp. 355-364. https://doi.org/10.1016/0039-6028(94)90056-6

APA Citation styleLimburg, J., Das, J., Schippers, S., Hoekstra, R., & Morgenstern, R. (1994). The interaction of hydrogenic ions with metal and semiconductor surfaces. Surface Science. 313(3), 355-364. https://doi.org/10.1016/0039-6028(94)90056-6


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