Preprint

Jahr der Veröffentlichung: 2007

Zeitschrift: arXiv

URL: 10.48550/arXiv.0709.1363

Verlag: Arxiv.org

Abstract: 

The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p(6) nl n'l' dielectronic recombination (DR) resonances associated with 3s to nl core excitations, 2s 2p(6) 3s nl n'l' resonances associated with 2s to nl (n=3,4) core excitations, and 2p(5) 3s nl n'l' resonances associated with 2p to nl (n=3,...,infinity) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s to 3p n'l' and 3s to 3d n'l' (both n'=3,...,6) and 2p(5) 3s 3l n'l' (n'=3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.

Harvard-Zitierstil: Schmidt, E., Bernhardt, D., Müller, A., Schippers, , Fritsche, S., Hoffmann, J., et al. (2007) Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations [Preprint]. arXiv, Article 0709.1363. 10.48550/arXiv.0709.1363

APA-Zitierstil: Schmidt, E., Bernhardt, D., Müller, A., Schippers, , Fritsche, S., Hoffmann, J., Jaroshevich, A., Krantz, C., Lestinsky, M., Orlov, D., Wolf, A., Lukic, D., & Savin, D. (2007). Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations. arXiv. 10.48550/arXiv.0709.1363