Konferenzpaper

Jahr der Veröffentlichung: 2012

Zeitschrift: Journal of Physics: Conference Series

Bandnummer: 388

DOI Link: https://doi.org/10.1088/1742-6596/388/6/062023

Konferenz: 27th International Conference on Photonic, Electronic and Atomic Collisions (ICPEAC 2011)

Verlag: IOP Publishing: Conference Series

Abstract: 

Motivated by the requirements for modeling EUV light sources for semiconductor lithography, a systematic study of electron-impact ionization cross sections of Sn^q+ ions (q = 1, ..., 13) in the energy range up to 1000 eV was performed. Detailed analysis of all in all 25 measured cross-section functions revealed strong contributions of indirect ionization mechanisms which need to be taken into account in EUV-source plasma modeling.

Harvard-Zitierstil: Borovik, A., Hillenbrand, P., Rudolph, J., Gharaibeh, M., Rausch, J., Huber, K., et al. (2012) Electron-impact single and double ionization of tin ions, Journal of Physics: Conference Series, 388, Article 062023. https://doi.org/10.1088/1742-6596/388/6/062023

APA-Zitierstil: Borovik, A., Hillenbrand, P., Rudolph, J., Gharaibeh, M., Rausch, J., Huber, K., Schippers, S., & Müller, A. (2012). Electron-impact single and double ionization of tin ions. Journal of Physics: Conference Series. 388, Article 062023. https://doi.org/10.1088/1742-6596/388/6/062023