Journal article

Publication year: 2017

Pages: 054002-

Journal: Physical Review Applied

Volume number: 8

Issue number: 5

ISSN: 2331-7019

DOI Link: https://doi.org/10.1103/PhysRevApplied.8.054002

Publisher: American Physical Society

Abstract: 
The synthesis of ε−Ga2O3 and β−Ga2O3 by plasma-assisted molecular beam epitaxy on (001)Al2O3 substrates is studied. The growth window of β−Ga2O3
in the Ga-rich regime, usually limited by the formation of volatile
gallium suboxide, is expanded due to the presence of tin during the
growth process, which stabilizes the formation of gallium oxides. X-ray
diffraction, transmission electron microscopy, time-of-flight
secondary-ion mass spectrometry, Raman spectroscopy, and atomic force
microscopy are used to analyze the influence of tin on the layer
formation. We demonstrate that it allows the synthesis of phase-pure ε−Ga2O3. A growth model based on the oxidation of gallium suboxide by reduction of an intermediate sacrificial tin oxide is suggested.

Harvard Citation style: Kracht, M., Karg, A., Schörmann, J., Weinhold, M., Zink, D., Michel, F., et al. (2017) Tin-Assisted Synthesis of ε−Ga2O3 by Molecular Beam Epitaxy, Physical Review Applied, 8(5), p. 054002. https://doi.org/10.1103/PhysRevApplied.8.054002

APA Citation style: Kracht, M., Karg, A., Schörmann, J., Weinhold, M., Zink, D., Michel, F., Rohnke, M., Schowalter, M., Gerken, B., Rosenauer, A., Klar, P., Janek, J., & Eickhoff, M. (2017). Tin-Assisted Synthesis of ε−Ga2O3 by Molecular Beam Epitaxy. Physical Review Applied. 8(5), 054002. https://doi.org/10.1103/PhysRevApplied.8.054002