Journalartikel

Jahr der Veröffentlichung: 2022

Zeitschrift: Journal of Applied Physics

Bandnummer: 132

Heftnummer: 19

ISSN: 0021-8979

eISSN: 1089-7550

DOI Link: https://doi.org/10.1063/5.0127232

Verlag: American Institute of Physics

Abstract: 
The tin-enhanced growth of Ga2O3 on (0001) Al2O3 by plasma-assisted molecular beam epitaxy using an ultrathin 6-layer of SnO2 is demonstrated. It is shown that this growth method results in a significantly reduced incorporation of residual Sn in the Ga2O3 film compared to the case of permanent Sn-supply. The ultrathin SnO2 layer, pre-deposited on the substrate, is sufficient to initiate phase pure growth of e-Ga(2)O(3 )in metal-rich growth conditions where otherwise no growth occurs. The chemical and morphological properties of the 6-layer are analyzed and the presence of SnO2 on the surface during the entire growth process is demonstrated. Furthermore, we show that this layer is stable during Ga-induced back-etching of a Ga2O3 film. Its impact on the kinetics of Ga2O3 growth is also discussed. Published under an exclusive license by AIP Publishing.

Harvard-Zitierstil: Karg, A., Kracht, M., Vogt, P., Messow, A., Braud, N., Schörmann, J., et al. (2022) Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer, Journal of Applied Physics, 132(19), Article 195304. https://doi.org/10.1063/5.0127232

APA-Zitierstil: Karg, A., Kracht, M., Vogt, P., Messow, A., Braud, N., Schörmann, J., Rohnke, M., Janek, J., Falta, J., & Eickhoff, M. (2022). Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer. Journal of Applied Physics. 132(19), Article 195304. https://doi.org/10.1063/5.0127232