Journal article

Publication year: 1998

Pages: 782-785

Journal: Surface Science

Volume number: 402-404

DOI Link: https://doi.org/10.1016/S0039-6028(97)01060-1

Publisher: Elsevier

Abstract: 

Using a recently developed MBE apparatus, the GaAs (-1-1-1)B(2×2) surface was prepared and studied in situ by photoemission and LEED intensity analysis. The measured surface core level shifts of the Ga and As 3d core levels support the atomic geometry of the As-trimer model whose detailed structure was determined by LEED intensity analysis.

Harvard Citation style: Setzer, C., Platen, J., Bludau, H., Gierer, M., Over, H. and Jacobi, K. (1998) LEED intensity and surface core level shift analysis of the MBE-prepared GaAs(-1-1-1)B(2x2) surface, Surface Science, 402-404, pp. 782-785. https://doi.org/10.1016/S0039-6028(97)01060-1

APA Citation style: Setzer, C., Platen, J., Bludau, H., Gierer, M., Over, H., & Jacobi, K. (1998). LEED intensity and surface core level shift analysis of the MBE-prepared GaAs(-1-1-1)B(2x2) surface. Surface Science. 402-404, 782-785. https://doi.org/10.1016/S0039-6028(97)01060-1