Journalartikel

In-CuInS2 nanocomposite film prepared by pulsed laser deposition using a single source precursor


AutorenlisteBensch, W; Quiroga-Gonzalez, E; Kienle, L; Duppel, V; Lee, DK; Janek, J

Jahr der Veröffentlichung2010

Seiten1953-1959

ZeitschriftSolid State Sciences

Bandnummer12

Heftnummer12

ISSN1293-2558

DOI Linkhttps://doi.org/10.1016/j.solidstatesciences.2010.08.005

VerlagElsevier


Abstract
An In-CuInS2 nanocomposite film has been prepared by Pulsed Laser Deposition applying a single source precursor X-ray powder diffraction Raman spectroscopy and transmission electron microscopy observations evidence that the film consists of nanocrystals of elemental In and chalcopynte type CuInS2 with sizes of 36 and 17 nm respectively A detailed analysis of the electrical performance of the film suggests that the nanoparticles are in Ohmic contact and that the resistivity is mainly caused by the CuInS2 nanocrystals which are less conducting than the pure In metal Irradiation of the film with light shows a photoconductive effect mainly with wavelengths larger than 515 nm and smaller than 850 nm



Autoren/Herausgeber




Zitierstile

Harvard-ZitierstilBensch, W., Quiroga-Gonzalez, E., Kienle, L., Duppel, V., Lee, D. and Janek, J. (2010) In-CuInS2 nanocomposite film prepared by pulsed laser deposition using a single source precursor, Solid State Sciences, 12(12), pp. 1953-1959. https://doi.org/10.1016/j.solidstatesciences.2010.08.005

APA-ZitierstilBensch, W., Quiroga-Gonzalez, E., Kienle, L., Duppel, V., Lee, D., & Janek, J. (2010). In-CuInS2 nanocomposite film prepared by pulsed laser deposition using a single source precursor. Solid State Sciences. 12(12), 1953-1959. https://doi.org/10.1016/j.solidstatesciences.2010.08.005



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