Journal article

Publication year: 2010

Pages: 1953-1959

Journal: Solid State Sciences

Volume number: 12

Issue number: 12

ISSN: 1293-2558

DOI Link: https://doi.org/10.1016/j.solidstatesciences.2010.08.005

Publisher: Elsevier

Abstract: 
An In-CuInS2 nanocomposite film has been prepared by Pulsed Laser Deposition applying a single source precursor X-ray powder diffraction Raman spectroscopy and transmission electron microscopy observations evidence that the film consists of nanocrystals of elemental In and chalcopynte type CuInS2 with sizes of 36 and 17 nm respectively A detailed analysis of the electrical performance of the film suggests that the nanoparticles are in Ohmic contact and that the resistivity is mainly caused by the CuInS2 nanocrystals which are less conducting than the pure In metal Irradiation of the film with light shows a photoconductive effect mainly with wavelengths larger than 515 nm and smaller than 850 nm

Harvard Citation style: Bensch, W., Quiroga-Gonzalez, E., Kienle, L., Duppel, V., Lee, D. and Janek, J. (2010) In-CuInS2 nanocomposite film prepared by pulsed laser deposition using a single source precursor, Solid State Sciences, 12(12), pp. 1953-1959. https://doi.org/10.1016/j.solidstatesciences.2010.08.005

APA Citation style: Bensch, W., Quiroga-Gonzalez, E., Kienle, L., Duppel, V., Lee, D., & Janek, J. (2010). In-CuInS2 nanocomposite film prepared by pulsed laser deposition using a single source precursor. Solid State Sciences. 12(12), 1953-1959. https://doi.org/10.1016/j.solidstatesciences.2010.08.005