Preparation of nitrogen-doped YSZ thin films by pulsed laser deposition and their characterization - Forschungsportal der Justus-Liebig-Universität Gießen:

Journalartikel

Preparation of nitrogen-doped YSZ thin films by pulsed laser deposition and their characterization

Autorenliste: Valov, I; De Souza, RA; Wang, CZ; Börger, A; Korte, C; Martin, M; Becker, KD; Janek, J

Jahr der Veröffentlichung: 2007

Seiten: 1931-1941

Zeitschrift: Journal of Materials Science

Bandnummer: 42

Heftnummer: 6

ISSN: 0022-2461

eISSN: 1573-4803

DOI Link: https://doi.org/10.1007/s10853-006-0174-9

Verlag: Springer

Abstract:
The pulsed laser deposition technique was applied to deposit nitrogen-doped yttria stabilized zirconia (YSZ) thin films. The working parameters were varied in order to achieve a maximal nitrogen content. The films were characterized by SIMS, XPS, X-ray diffraction and optical spectroscopy. The surface topography was studied by AFM and HRSEM. The influence of the deposition parameters on the film properties is discussed.

Autoren/Herausgeber

- Uni.-Prof. Dr. Jürgen Janek

Zitierstile

Harvard-Zitierstil: Valov, I., De Souza, R., Wang, C., Börger, A., Korte, C., Martin, M., et al. (2007) Preparation of nitrogen-doped YSZ thin films by pulsed laser deposition and their characterization, Journal of Materials Science, 42(6), pp. 1931-1941. https://doi.org/10.1007/s10853-006-0174-9

APA-Zitierstil: Valov, I., De Souza, R., Wang, C., Börger, A., Korte, C., Martin, M., Becker, K., & Janek, J. (2007). Preparation of nitrogen-doped YSZ thin films by pulsed laser deposition and their characterization. Journal of Materials Science. 42(6), 1931-1941. https://doi.org/10.1007/s10853-006-0174-9