Journalartikel

Jahr der Veröffentlichung: 2023

Zeitschrift: physica status solidi (b) – basic solid state physics

Bandnummer: 260

Heftnummer: 9

ISSN: 0370-1972

eISSN: 1521-3951

Open Access Status: Hybrid

DOI Link: https://doi.org/10.1002/pssb.202300103

Verlag: Wiley

Abstract: 
The ongoing miniaturization of semiconductor devices renders charge-carrier transport along interfaces increasingly important. The characteristic length scales in state-of-the-art semiconductor technology span only a few nanometers. Consequently, charge-carrier transport inevitably occurs directly at interfaces between adjacent layers rather than being confined to a single material. Herein, charge-carrier diffusion is systematically studied in prototypical active layer systems, namely, in type-I direct-gap quantum wells and in type-II heterostructures. The impact of internal interfaces are revealed in detail as charge-carrier diffusion takes place much closer to or even across the internal interfaces in type-II heterostructures. Type-I quantum wells and type-II heterostructures exhibit comparable diffusion rates given similar inhomogeneous exciton linewidths. Consequently, the changes in the structural quality of the interfaces are responsible for changes in diffusion and charge-carrier transport along interfaces rather than the existence of the interfaces themselves.

Harvard-Zitierstil: Mengel, N., Guembel, L., Klement, P., Fey, M., Fuchs, C., Volz, K., et al. (2023) The Influence of Internal Interfaces on Charge-Carrier Diffusion in Semiconductor Heterostructures, physica status solidi (b) – basic solid state physics, 260(9). https://doi.org/10.1002/pssb.202300103

APA-Zitierstil: Mengel, N., Guembel, L., Klement, P., Fey, M., Fuchs, C., Volz, K., Chatterjee, S., & Stein, M. (2023). The Influence of Internal Interfaces on Charge-Carrier Diffusion in Semiconductor Heterostructures. physica status solidi (b) – basic solid state physics. 260(9). https://doi.org/10.1002/pssb.202300103