Journal article

The Influence of Internal Interfaces on Charge-Carrier Diffusion in Semiconductor Heterostructures


Authors listMengel, Nils; Guembel, Lukas; Klement, Philip; Fey, Melanie; Fuchs, Christian; Volz, Kerstin; Chatterjee, Sangam; Stein, Markus

Publication year2023

Journalphysica status solidi (b) – basic solid state physics

Volume number260

Issue number9

ISSN0370-1972

eISSN1521-3951

Open access statusHybrid

DOI Linkhttps://doi.org/10.1002/pssb.202300103

PublisherWiley


Abstract
The ongoing miniaturization of semiconductor devices renders charge-carrier transport along interfaces increasingly important. The characteristic length scales in state-of-the-art semiconductor technology span only a few nanometers. Consequently, charge-carrier transport inevitably occurs directly at interfaces between adjacent layers rather than being confined to a single material. Herein, charge-carrier diffusion is systematically studied in prototypical active layer systems, namely, in type-I direct-gap quantum wells and in type-II heterostructures. The impact of internal interfaces are revealed in detail as charge-carrier diffusion takes place much closer to or even across the internal interfaces in type-II heterostructures. Type-I quantum wells and type-II heterostructures exhibit comparable diffusion rates given similar inhomogeneous exciton linewidths. Consequently, the changes in the structural quality of the interfaces are responsible for changes in diffusion and charge-carrier transport along interfaces rather than the existence of the interfaces themselves.



Citation Styles

Harvard Citation styleMengel, N., Guembel, L., Klement, P., Fey, M., Fuchs, C., Volz, K., et al. (2023) The Influence of Internal Interfaces on Charge-Carrier Diffusion in Semiconductor Heterostructures, physica status solidi (b) – basic solid state physics, 260(9). https://doi.org/10.1002/pssb.202300103

APA Citation styleMengel, N., Guembel, L., Klement, P., Fey, M., Fuchs, C., Volz, K., Chatterjee, S., & Stein, M. (2023). The Influence of Internal Interfaces on Charge-Carrier Diffusion in Semiconductor Heterostructures. physica status solidi (b) – basic solid state physics. 260(9). https://doi.org/10.1002/pssb.202300103



Keywords


2-DIMENSIONAL EXCITONScharge-carrier transportcharge-transfer excitonsinternal interfacesPHOTOEXCITED CARRIERSQUANTUM-WELLSsemiconductor heterostructures

Last updated on 2025-10-06 at 11:54