Journalartikel
Autorenliste: Lu, Hao; Chen, Lufeng; Cao, RuiQi; Tao, Xin; Wang, Xinru; Li, Mingkai; Li, Pai; Lu, Yinmei; Klar, Peter J.; He, Yunbin
Jahr der Veröffentlichung: 2020
Zeitschrift: Applied Physics Letters
Bandnummer: 116
Heftnummer: 19
ISSN: 0003-6951
eISSN: 1077-3118
DOI Link: https://doi.org/10.1063/5.0005426
Verlag: American Institute of Physics
Abstract:
Alloying VO2 by Ru incorporation (RuxV1-xO2) should decrease the insulator-metal-transition (IMT) temperature due to the unique semi-metallic properties of RuO2. We deposit high-quality RuxV1-xO2 thin films by pulsed laser deposition on (0001) sapphire substrates. We investigate the structural, electrical, and optical properties of the RuxV1-xO2 alloy films using x-ray diffraction, x-ray photoelectron spectroscopy, UV-Vis-NIR spectrophotometry, and four-point-probe resistivity measurements. Our results confirm that Ru alloying of VO2 reduces effectively the IMT temperature while retaining the IMT characteristics of the material. Published under license by AIP Publishing.
Zitierstile
Harvard-Zitierstil: Lu, H., Chen, L., Cao, R., Tao, X., Wang, X., Li, M., et al. (2020) RuVO2 alloy epitaxial films: Lowered insulator-metal transition temperature and retained modulation capacity, Applied Physics Letters, 116(19), Article 192103. https://doi.org/10.1063/5.0005426
APA-Zitierstil: Lu, H., Chen, L., Cao, R., Tao, X., Wang, X., Li, M., Li, P., Lu, Y., Klar, P., & He, Y. (2020). RuVO2 alloy epitaxial films: Lowered insulator-metal transition temperature and retained modulation capacity. Applied Physics Letters. 116(19), Article 192103. https://doi.org/10.1063/5.0005426
Schlagwörter
PHASE-TRANSITION; vanadium dioxide; VO2
