Journal article

Publication year: 2020

Journal: Applied Physics Letters

Volume number: 116

Issue number: 19

ISSN: 0003-6951

eISSN: 1077-3118

DOI Link: https://doi.org/10.1063/5.0005426

Publisher: American Institute of Physics

Abstract: 
Alloying VO2 by Ru incorporation (RuxV1-xO2) should decrease the insulator-metal-transition (IMT) temperature due to the unique semi-metallic properties of RuO2. We deposit high-quality RuxV1-xO2 thin films by pulsed laser deposition on (0001) sapphire substrates. We investigate the structural, electrical, and optical properties of the RuxV1-xO2 alloy films using x-ray diffraction, x-ray photoelectron spectroscopy, UV-Vis-NIR spectrophotometry, and four-point-probe resistivity measurements. Our results confirm that Ru alloying of VO2 reduces effectively the IMT temperature while retaining the IMT characteristics of the material. Published under license by AIP Publishing.

Harvard Citation style: Lu, H., Chen, L., Cao, R., Tao, X., Wang, X., Li, M., et al. (2020) RuVO₂ alloy epitaxial films: Lowered insulator-metal transition temperature and retained modulation capacity, Applied Physics Letters, 116(19), Article 192103. https://doi.org/10.1063/5.0005426

APA Citation style: Lu, H., Chen, L., Cao, R., Tao, X., Wang, X., Li, M., Li, P., Lu, Y., Klar, P., & He, Y. (2020). RuVO₂ alloy epitaxial films: Lowered insulator-metal transition temperature and retained modulation capacity. Applied Physics Letters. 116(19), Article 192103. https://doi.org/10.1063/5.0005426