Journal article

Publication year: 2018

Journal: Physical Review Applied

Volume number: 10

Issue number: 2

ISSN: 2331-7019

DOI Link: https://doi.org/10.1103/PhysRevApplied.10.024047

Publisher: American Physical Society

Abstract: 
Ga2O3 thin films are grown on (011 (1) over bar2)-oriented (r-plane) alpha-Al2O3 by plasma-assisted MBE (PAMBE). The metastable alpha-Ga2O3 phase is isomorphically stabilized up to a thickness of more than 200 nm, exceeding the maximum layer thickness reported for PAMBE growth on c-plane Al2O3. The thickness is limited by nucleation of ss-Ga2O3 on the exposed c facets of the alpha-Ga2O3. The growth process is characterized by in situ reflection of high-energy electron diffraction and ex situ high-resolution x-ray diffraction measurements. Heteroepitaxial growth of r-plane alpha-Ga2O3 further allows for the determination of the dielectric function's anisotropy. Both the ordinary and the extraordinary elements of the dielectric tensor are determined by spectroscopic ellipsometry measurements. The extraordinary absorption onset is found to be at lower photon energy than the ordinary one. Lineshape analysis for light polarizations perpendicular and parallel to the optic axis reveals band gaps of 5.62 and 5.58 eV, respectively.

Harvard Citation style: Kracht, M., Karg, A., Feneberg, M., Blaesing, J., Schoermann, J., Goldhahn, R., et al. (2018) Anisotropic Optical Properties of Metastable (01(1)over-bar2) α-Ga₂O₃ Grown by Plasma-Assisted Molecular Beam Epitaxy, Physical Review Applied, 10(2), Article 024047. https://doi.org/10.1103/PhysRevApplied.10.024047

APA Citation style: Kracht, M., Karg, A., Feneberg, M., Blaesing, J., Schoermann, J., Goldhahn, R., & Eickhoff, M. (2018). Anisotropic Optical Properties of Metastable (01(1)over-bar2) α-Ga₂O₃ Grown by Plasma-Assisted Molecular Beam Epitaxy. Physical Review Applied. 10(2), Article 024047. https://doi.org/10.1103/PhysRevApplied.10.024047