Journalartikel

Jahr der Veröffentlichung: 2011

Zeitschrift: Physical Review B

Bandnummer: 83

Heftnummer: 23

ISSN: 1098-0121

DOI Link: https://doi.org/10.1103/PhysRevB.83.235213

Verlag: American Physical Society

Abstract: 
Photomodulated reflectance (PR) spectra of (B, Ga, In) As epilayers reveal unusual changes of the fundamental band gap PR line shape with temperature and hydrostatic pressure. We show that these changes arise because temperature variation or hydrostatic pressure shifts the conduction band edge (CBE) into resonance with boron-related cluster states. The resulting line shape changes are described by a level repulsion model which yields states of mixed character with an exchange of oscillator strengths. This model is corroborated by theoretical calculations which show a finite density of boron cluster states above the CBE at room temperature, with appropriate symmetry to couple to the CBE state.

Harvard-Zitierstil: Sander, T., Teubert, J., Klar, P., Lindsay, A. and O'Reilly, E. (2011) Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As, Physical review B, 83(23), Article 235213. https://doi.org/10.1103/PhysRevB.83.235213

APA-Zitierstil: Sander, T., Teubert, J., Klar, P., Lindsay, A., & O'Reilly, E. (2011). Effect of localized boron impurities on the line shape of the fundamental band gap transition in photomodulated reflectance spectra of (B, Ga, In)As. Physical review B. 83(23), Article 235213. https://doi.org/10.1103/PhysRevB.83.235213