Journalartikel
Autorenliste: Pettinari, G.; Polimeni, A.; Masia, F.; Trotta, R.; Felici, M.; Capizzi, M.; Niebling, T.; Stolz, W.; Klar, P. J.
Jahr der Veröffentlichung: 2007
Zeitschrift: Physical Review Letters
Bandnummer: 98
Heftnummer: 14
ISSN: 0031-9007
eISSN: 1079-7114
DOI Link: https://doi.org/10.1103/PhysRevLett.98.146402
Verlag: American Physical Society
Abstract:
The dependence of the electron mass on hydrostatic pressure P in N-diluted GaAs1-xNx (x=0.10% and 0.21%) is investigated by magnetophotoluminescence. Exceedingly large fluctuations (up to 60%/kbar) in the electron mass with increasing P are found. These originate from a pressure-driven tuning of the hybridization degree between the conduction band minimum and specific nitrogen-related states. Present results suggest a hierarchy between different nitrogen complexes as regards the extent of the perturbation these complexes exert on the electronic properties of the GaAs host.
Zitierstile
Harvard-Zitierstil: Pettinari, G., Polimeni, A., Masia, F., Trotta, R., Felici, M., Capizzi, M., et al. (2007) Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure, Physical Review Letters, 98(14), Article 146402. https://doi.org/10.1103/PhysRevLett.98.146402
APA-Zitierstil: Pettinari, G., Polimeni, A., Masia, F., Trotta, R., Felici, M., Capizzi, M., Niebling, T., Stolz, W., & Klar, P. (2007). Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure. Physical Review Letters. 98(14), Article 146402. https://doi.org/10.1103/PhysRevLett.98.146402
Schlagwörter
Exciton; GAAS1-XNX