Journalartikel

Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure


AutorenlistePettinari, G.; Polimeni, A.; Masia, F.; Trotta, R.; Felici, M.; Capizzi, M.; Niebling, T.; Stolz, W.; Klar, P. J.

Jahr der Veröffentlichung2007

ZeitschriftPhysical Review Letters

Bandnummer98

Heftnummer14

ISSN0031-9007

eISSN1079-7114

DOI Linkhttps://doi.org/10.1103/PhysRevLett.98.146402

VerlagAmerican Physical Society


Abstract
The dependence of the electron mass on hydrostatic pressure P in N-diluted GaAs1-xNx (x=0.10% and 0.21%) is investigated by magnetophotoluminescence. Exceedingly large fluctuations (up to 60%/kbar) in the electron mass with increasing P are found. These originate from a pressure-driven tuning of the hybridization degree between the conduction band minimum and specific nitrogen-related states. Present results suggest a hierarchy between different nitrogen complexes as regards the extent of the perturbation these complexes exert on the electronic properties of the GaAs host.



Zitierstile

Harvard-ZitierstilPettinari, G., Polimeni, A., Masia, F., Trotta, R., Felici, M., Capizzi, M., et al. (2007) Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure, Physical Review Letters, 98(14), Article 146402. https://doi.org/10.1103/PhysRevLett.98.146402

APA-ZitierstilPettinari, G., Polimeni, A., Masia, F., Trotta, R., Felici, M., Capizzi, M., Niebling, T., Stolz, W., & Klar, P. (2007). Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure. Physical Review Letters. 98(14), Article 146402. https://doi.org/10.1103/PhysRevLett.98.146402



Schlagwörter


ExcitonGAAS1-XNX


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