Journal article

Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure


Authors listPettinari, G.; Polimeni, A.; Masia, F.; Trotta, R.; Felici, M.; Capizzi, M.; Niebling, T.; Stolz, W.; Klar, P. J.

Publication year2007

JournalPhysical Review Letters

Volume number98

Issue number14

ISSN0031-9007

eISSN1079-7114

DOI Linkhttps://doi.org/10.1103/PhysRevLett.98.146402

PublisherAmerican Physical Society


Abstract
The dependence of the electron mass on hydrostatic pressure P in N-diluted GaAs1-xNx (x=0.10% and 0.21%) is investigated by magnetophotoluminescence. Exceedingly large fluctuations (up to 60%/kbar) in the electron mass with increasing P are found. These originate from a pressure-driven tuning of the hybridization degree between the conduction band minimum and specific nitrogen-related states. Present results suggest a hierarchy between different nitrogen complexes as regards the extent of the perturbation these complexes exert on the electronic properties of the GaAs host.



Citation Styles

Harvard Citation stylePettinari, G., Polimeni, A., Masia, F., Trotta, R., Felici, M., Capizzi, M., et al. (2007) Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure, Physical Review Letters, 98(14), Article 146402. https://doi.org/10.1103/PhysRevLett.98.146402

APA Citation stylePettinari, G., Polimeni, A., Masia, F., Trotta, R., Felici, M., Capizzi, M., Niebling, T., Stolz, W., & Klar, P. (2007). Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure. Physical Review Letters. 98(14), Article 146402. https://doi.org/10.1103/PhysRevLett.98.146402



Keywords


ExcitonGAAS1-XNX

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